CEL NESG7030M04 NPN Silicon
Germanium Carbon RF Transistor
CEL NESG7030M04 NPN Silicon Germanium Carbon RF Transistor has been developed for 802.11ac Wi-Fi applications. This new WLAN/Wi-Fi (802.11ac) standard has increased the interest of Chipset customers for a 5-6GHZ LNA device. This device is ideal for low noise, high gain application. Typical applications include electronic toll collection, satellite radio and general short range wireless communication.
The device is an ideal choice for low noise, high gain amplification.
NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz
Ga = 14 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz
PO (1 dB) = 4.5 dBm TYP. @ VCE = 2 V, IC (set) = 10 mA, f = 2 GHz
Maximum stable power gain: MSG =16.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 5.8 GHz
SiGe: C HBT technology
This product is improvement of ESD.
Flat-lead 4-pin thin-type super minimold (M04 PKG)